ИС управления транзисторами IR2233PBF

Товар отсутствует на складе.
Товар можно оформить под заказ.
| Current - peak output (source, sink) | 250mA, 500mA |
| Driven configuration | Half-Bridge |
| Gate type | IGBT, N-Channel MOSFET |
| High side voltage - max (bootstrap) | 1200V |
| Input type | Inverting |
| Logic voltage - vil, vih | 0.8V, 2V |
| Mounting type | Through Hole |
| Number of drivers | 6 |
| Operating temperature | 125°C (TJ) |
| Package / case | 28-DIP (0.600", 15.24mm) |
| Packaging | Tube |
| Part status | Active |
| Rise / fall time (typ) | 90ns, 40ns |
| Supplier device package | 28-PDIP |
| Voltage - supply | 10 V ~ 20 V |
| Производитель | Infineon Technologies |

