ИС управления транзисторами HIP2123FRTBZ

Товар отсутствует на складе.
Товар можно оформить под заказ.
| Current - peak output (source, sink) | 2A, 2A |
| Driven configuration | Half-Bridge |
| Gate type | N-Channel MOSFET |
| High side voltage - max (bootstrap) | 114V |
| Input type | Inverting |
| Logic voltage - vil, vih | 1.4V, 2.2V |
| Mounting type | Surface Mount |
| Number of drivers | 2 |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package / case | 9-WDFN Exposed Pad |
| Packaging | Tube |
| Part status | Obsolete |
| Rise / fall time (typ) | 10ns, 10ns |
| Supplier device package | 9-TDFN (4x4) |
| Voltage - supply | 8 V ~ 14 V |
| Производитель | Renesas Electronics America Inc. |

