ИС управления транзисторами IR2117PBF
Товар отсутствует на складе.
Товар можно оформить под заказ.
Current - peak output (source, sink) | 250mA, 500mA |
Driven configuration | High-Side |
Gate type | IGBT, N-Channel MOSFET |
High side voltage - max (bootstrap) | 600V |
Input type | Non-Inverting |
Logic voltage - vil, vih | 6V, 9.5V |
Mounting type | Through Hole |
Number of drivers | 1 |
Operating temperature | -40°C ~ 150°C (TJ) |
Package / case | 8-DIP (0.300", 7.62mm) |
Packaging | Tube |
Part status | Active |
Rise / fall time (typ) | 80ns, 40ns |
Supplier device package | 8-PDIP |
Voltage - supply | 10 V ~ 20 V |
Производитель | Infineon Technologies |