ИС управления транзисторами NCP5104DR2G
Товар отсутствует на складе.
Товар можно оформить под заказ.
Current - peak output (source, sink) | 250mA, 500mA |
Driven configuration | Half-Bridge |
Gate type | IGBT, N-Channel MOSFET |
High side voltage - max (bootstrap) | 600V |
Input type | Non-Inverting |
Logic voltage - vil, vih | 0.8V, 2.3V |
Mounting type | Surface Mount |
Number of drivers | 2 |
Operating temperature | -40°C ~ 125°C (TJ) |
Package / case | 8-SOIC (0.154", 3.90mm Width) |
Packaging | Cut Tape (CT) |
Part status | Active |
Rise / fall time (typ) | 85ns, 35ns |
Supplier device package | 8-SOIC |
Voltage - supply | 10 V ~ 20 V |
Производитель | ON Semiconductor |