Память R1RW0408DGE-2LR#B0
Товар отсутствует на складе.
Товар можно оформить под заказ.
Access time | 12ns |
Clock frequency | - |
Memory interface | Parallel |
Memory size | 4Mb (512K x 8) |
Memory type | Volatile |
Mounting type | Surface Mount |
Operating temperature | 0°C ~ 70°C (TA) |
Package / case | 36-BSOJ (0.400", 10.16mm Width) |
Packaging | Tube |
Part status | Last Time Buy |
Supplier device package | 36-SOJ |
Technology | SRAM |
Voltage - supply | 3 V ~ 3.6 V |
Write cycle time - word, page | 12ns |
Производитель | Renesas Electronics America |